| DOC Type | Qty | Description | DOC Type | Qty | Description | DOC Type | Qty |
| Annex (Annexes for JESD21-C) | 1 | 该表简要描述了与其前身JESD21C版本26相比，对此标准JESD21-C版本27所做的更改。 | JESD (JEDEC Standards) | 362 |
| PS- (Performance Standards) | 3 |
| CO- (Carrier Outlines) | 35 | 载具轮廓尺寸：各种Package适用的Magazine，Tray，Carrier ，Tube | JIG (Joint Industry Guide) | 2 |
| PSRAM (3.8 Pseudostatic Random Access Memory) | 1 |
| CS- (Carrier Standards) | 8 | JM (JEDEC Manual) | 7 |
| RDF (Registration Data Format) | 1 |
| DG- (Design Guideline) | 17 | 各种Package Design Guide | JP (Joint Publication) | 2 |
| ROM (3.2 Read Only Memory) | 2 |
| DIMM (DIMM Index Page) | 1 | Dual-Inline-Memory-Modules双列直插式存储模块相关 | JS (Joint Standard) | 6 |
| SDRAM (3.11 Synchronous Dynamic Random Access Memory) | 16 |
| DO- (Diode Outlines) | 19 | 二极管轮廓尺寸 | MCP (3.12 Multi Chip Packages) | 4 |
| SO- (Socket Outlines) | 22 |
| DR- (Design Registration) | 6 | 各种Package Design Requirement | MO- (Microelectronic Outlines) | 326 |
| SPD (4.1.2 Serial Presence Detect) | 24 |
| DRAM (3.9 Dynamic Random Access Memory) | 6 |
| MODULE (4, 4.2, 4.3, 4.4, 4.5, 4.6, 4.7, 4.20 Modules) | 119 |
| SPP- (Standard Practices and Procedures) | 25 |
| EEPROM (3.5 Electrically Erasable Programmable Read Only Memory) | 4 |
| MPDRAM (3.10 Multiport Dynamic Random Access Memory) | 5 |
| SRAM (3.7 Static Random Access Memory) | 11 |
| EIA (EIA Standards) | 10 | 电子工业协会标准 | Dynamic Random Access Memory) | 5 |
| TENTSTD (Tentative Standards) | 2 |
| EPROM (3.4 Erasable Programmable Read Only Memory) | 3 |
| MS- (Microelectronic Standards) | 34 |
| TS- (Transistor Standards) | 5 |
| GS- (Gauge Standards) | 10 |
| NVRAM (3.6 Nonvolatile Random Access Memory) | 2 |
| UO- (Uncased Outlines) | 2 |
| J-STD- (Joint IPC/JEDEC Standards) | 8 |
| PR (Preliminary Release for JESD21-C) | 8 |
| US- (Uncased Standards) | 1 |
| JEB (JEDEC Engineering Bulletins) | 8 |
| PROM (3.3 Programmable Read Only Memory) | 3 |
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| JEP (JEDEC Publications) | 97 |
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发表于 2024-7-1 16:01:27
